Document
TYPICAL PERFORMANCE CURVES ®
APT200GN60JDQ4 600V
www.DataSheet4U.com APT200GN60JDQ4
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses
E G C
E
S
OT
22
7
• • • • •
• 600V Field Stop
ISOTOP ®
"UL Recognized"
file # E145592
Trench Gate: Low VCE(on) Easy Paralleling 5µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability 175°C Rated
C G E
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT200GN60JDQ4 UNIT Volts
600 ±20 283 158 600 600A @600V 682 -55 to 175
Amps
Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C) MIN TYP MAX UNIT
600 5 1.05 5.8 1.45 1.65 1.15 1.19 50
2
6.5 1.85
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) I CES I GES RGINT Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
2
µA nA Ω
3-2005 050-7611 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor
TBD 600 2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT200GN60JDQ4
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 100A TJ = 175°C, R G = 1.0Ω
7,
MIN
TYP
www.DataSheet4U.com
MAX
UNIT pF V nC
14100 4610 4000 8.2 1180 85 660
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100µH, VCE = 600V TJ = 150°C, R G = 1.0Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 200A VCC = 360V, VGE = 15V,
600 5 50 80 560 100 13 15 11 50 80 620 70 14 16 10
A
µs
ns
RG = 1.0Ω 7 TJ = +25°C
Turn-on Switching Energy (Diode)
6
mJ
Inductive Switching (125°C) VCC =400V VGE = 15V I C = 200A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125°C
RG = 1.0Ω 7
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RθJC RθJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Wavefom from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT °C/W Volts
.22 .33 2500 1.03 29.2 10 1.1
oz gm Ib•in N•m
Torque
1
Maximum Terminal & Mounting Torque
Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3-2005 Rev B 050-7611
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
400 350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 0 0..