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APT200GT60JR

Microsemi Corporation

Thunderbolt IGBT

www.DataSheet4U.com APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new g...


Microsemi Corporation

APT200GT60JR

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www.DataSheet4U.com APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features Low Forward Voltage Drop Low Tail Current Integrated Gate Resistor Low EMI, High Reliability RoHS Compliant RBSOA and SCSOA Rated High Frequency Switching to 50KHz Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified. Ratings 600 Volts ±30 195 100 600 600A @ 600V 500 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 4.0mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Ga...




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