APT200GT60JRDL

TYPICAL PERFORMANCE CURVES APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical www.DataSheet4U.com APT200GT60JRDL Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E E G C 7 -22 T SO "UL Recognized" file # E145592 Features Low Forward Voltage Drop Low Tail Current Integrated Gate Resistor Low EMI, High Reliability Low forward Diode Voltage (VF) RoHS Compliant Ultra soft recovery diode RBSOA and SCSOA Rated High Frequency Switching to 50KHz Ultra Low Leakage Current Typical Applications ZVS Phase Shifted Bridge Resonant Mode Switching Phase Shifted Bridge Welding Induction heating High Frequency SMPS ISOTOP ® C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT200GT60JRDL UNIT Volts 600 ±30 195 100 600 600A @ 600V 595 -55 to 150 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C =...