2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205A
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
• Fast Page Mode Access Cycle • TTL compatible inp...
Description
IS41LV8205A
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
Fast Page Mode Access Cycle TTL compatible inputs and outputs Refresh Interval: -- 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Lead-free available
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ISSI
®
FEBRUARY 2005
DESCRIPTION
The ISSI IS41LV8205A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4bit word. These features make the IS41LV8205A ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS41LV8205A is packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts.
PRODUCT SERIES OVERVIEW
Part No. IS41LV8205A Refresh 2K Voltage 3.3V ± 10%
KEY TIMING PARAMETERS
Parameter RAS Access Time (tRAC) CAS Access Time (tCAC) Column Address Access Time (tAA) Fast Page Mode Cycle Time (tPC) Read/Write Cycle Time (tRC) -50 50 14 25 20 85 -60 60 15 30 25 104 Unit ns ns ns ns ns
PIN CONFIGURATION
28 Pin SOJ
VDD I/O0 I/O1 I/O2 I/O3 WE RAS NC A10 A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
GND I/O7 I/O6 I/O5 I/O4 CAS OE A9 A8 A7 A6 A5 A4 GND
PIN DESCRIPTIONS
A0-A10 I/O0-7 WE OE RAS CAS VDD GND NC Address Inputs Data Inputs/Outputs Write Enable Outp...
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