PH16030L

PH16030L N-channel TrenchMOS™ logic level FET Rev. 01 — 24 February 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s SO8 equivalent area footprint s Low thermal resistance s Low gate charge. 1.3 Applications s DC-to-DC converters s Portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 16.9 mΩ s ID ≤ 38 A s Qgd = 2.9 nC (typ). 2. Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain mb D Simplified outline Symbol G mbb076 S 1 2 3 4 SOT669 (LFPAK) Philips Semiconductors w w w . D a t a S h e e t 4 U . c PH16030L N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name PH16030L LFPAK Description plastic single-ended surface mounted package; 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load...