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STD60NF55LA Dataheets PDF



Part Number STD60NF55LA
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD60NF55LA DatasheetSTD60NF55LA Datasheet (PDF)

www.DataSheet4U.com STD60NF55LA N-channel 55V - 0.012Ω - 60A - DPAK STripFET™ II Power MOSFET General features Type STD60NF55LA ■ VDSS 55V RDS(on) <0.015Ω ID 60A Low threshold drive 1 DPAK 3 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable .

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www.DataSheet4U.com STD60NF55LA N-channel 55V - 0.012Ω - 60A - DPAK STripFET™ II Power MOSFET General features Type STD60NF55LA ■ VDSS 55V RDS(on) <0.015Ω ID 60A Low threshold drive 1 DPAK 3 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number STD60NF55LAT4 Marking D60NF55LA Package DPAK Packaging Tape & reel September 2006 Rev 2 1/14 www.st.com 14 Contents www.DataSheet4U.com STD60NF55LA Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STD60NF55LA www.DataSheet4U.com Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Value 55 ± 15 60 42 240 110 0.73 16 400 -55 to 175 Max. operating junction temperature Unit V V A A A W W/°C V/ns mJ °C Ptot dv/dt(2) EAS (3) Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Tstg Tj 1. Pulse width limited by safe operating area. 2. ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. 3. Starting Tj = 25 oC, ID = 17.5A, VDD =24V Table 2. Rthj-case Rthj-amb Thermal data Thermal resistance junction-case max Thermal resistance junction-to ambient max 1.36 100 °C/W °C/W 3/14 Electrical characteristics www.DataSheet4U.com STD60NF55LA 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) ID(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance On state drain current Test conditions ID = 250µA, VGS =0 VDS = Max rating VDS = Max rating,@125°C VGS = ± 15V VDS = VGS, ID = 250µA VGS = 10V, ID = 30A VGS = 5V, ID = 30A VGS = 3.5V, VDS >12V -55°C < Tj < 150°C 35 1 0.012 0.014 Min. 55 1 10 ±100 2 0.015 0.017 Typ. Max. Unit V µA µA nA V Ω Ω A Table 4. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 10V, ID = 30A Min. Typ. 35 1950 390 130 30 180 80 35 40 10 20 56 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDD = 25V, ID = 30A RG = 4.7Ω VGS = 4.5V (see Figure 13) VDD = 40V, ID = 60A, VGS = 5V, RG = 4.7Ω (see Figure 14) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/14 STD60NF55LA www.DataSheet4U.com Electrical characteristics Table 5. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 60A, VGS = 0 65 130 4 Test conditions Min. Typ. Max. 60 240 1.3 Unit A A V ns nC A Reverse recovery time ISD = 40A, di/dt = 100A/µs, Reverse recovery charge VDD = 25V, Tj = 150°C Reverse recovery current (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/14 Electrical characteristics www.DataSheet4U.com STD60NF55LA 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STD60NF55LA Figure 7. Gate charge vs gate-source voltage Figure 8. www.DataSheet4U.com Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Electrical characteristics Figure 12. Allowable IAV vs time in avalanche www.DataSheet4U.com STD60NF55LA The previous curve gives the safe operating area for unclamped.


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