IXFX21N100Q

www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFK 21N100Q IXFX 21N100Q VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Maximum Ratings 1000 1000 ± 20 ± 30 21 84 21 60 2.5 10 500 -55 ... +150 150 -55 ... +150 300 0.4/6 6 10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless...