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PD-96-957 RevD
Integrated Power Hybrid IC for Appliance Motor Drive Applications.
Description
IRAMX16UP60B Series 16A, 600V
with Internal Shunt Resistor
International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package (SiP2) with full transfer mold structure minimizes PCB space and resolve isolation problems to heatsink.
• • • • • • • • •
Internal Shunt Resistor Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor Low VCE(on) Non Punch Through IGBT Technology Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity • Motor Power range 0.75~2.2kW / 85~253 Vac • Isolation 2000VRMS min • UL certification pending (UL number: E78996)
Features
Absolute Maximum Ratings
Parameter VCES / VRRM V+ IO @ TC=25°C IO @ TC=100°C IO FPWM PD VISO TJ (IGBT & Diodes) TJ (Driver IC) T Description IGBT/Diode Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Pulsed RMS Phase Current (Note 2) PWM Carrier Frequency Power dissipation per IGBT @ TC =25°C Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque Range (M3 screw) Value 600 450 16 8 30 20 31 2000 -40 to +150 -40 to +150 0.5 to 1.0 kHz W VRMS °C Nm A Units V
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25°C; FPWM=16kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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IRAMX16UP60B
Internal Electrical Schematic - IRAMX16UP60B
V + (10)
V- (12)
VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2)
23 VS1 24 HO1 25 VB1 1 VCC
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) FLT-EN(21) ITRIP (22) VTH (13) VCC (14) VSS (23) THERMISTOR
Driver IC
LO2 15
2 HIN1 3 HIN2 4 HIN3 5 LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LO3 14
2
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IRAMX16UP60B
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM/ITRIP. Symbol IBDF PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Diode Peak Forward Current Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, EN, ITrip Min ----VB1,2,3 - 25 -0.3 -0.3 Max 4.5 25.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions A W V V V tP= 10ms, TJ = 150°C, TC=100°C tP=100µs, TC =100°C ESR / ERJ series
VIN, VEN, VITRIP
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol V(BR)CES ∆V(BR)CES / ∆T VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Current Protection Threshold (positive going) Min 600 ---------------------21 Typ --0.3 1.55 1.80 5 165 2.0 1.4 ---22 ----Max ----1.85 2.10 80 --2.4 1.9 1.25 1.10 --±5 28 Units Conditions V V/°C V VIN=5V, IC=250µA VIN=5V, IC=1.0mA (25°C - 150°C) IC=8A, VCC=15V IC=8A, VCC=15V, TJ=150°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C IC=8A IC=8A, TJ=150°C IF=1A IF=1A, TJ=125°C TJ=25°C TJ=25°C TJ=-40°C to 125°C See Fig. 2
ICES
µA
VFM
V
VBDFM RBR ∆RBR/RBR IBUS_TRIP
V Ω % A
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IRAMX16UP60B
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Reverse Bias Safe Operating Area Min ----------------------Typ 315 150 465 30 70 500 270 770 60 120 56 FULL SQUARE Max 435 180 615 60 90 700 335 1035 100 150 84 ns nC
+
Units Conditions IC=8A, V+=400V VC.