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IXGH32N170 Dataheets PDF



Part Number IXGH32N170
Manufacturers IXYS
Logo IXYS
Description High Voltage IGBT
Datasheet IXGH32N170 DatasheetIXGH32N170 Datasheet (PDF)

www.DataSheet4U.com High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 250 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.8 VCES 350 -55 ... +150 150 -5.

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www.DataSheet4U.com High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 250 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.8 VCES 350 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector W °C °C °C °C °C z z G = Gate, E = Emitter, Features z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25°C TJ = 125°C 5.0 50 1 ± 100 TJ = 25°C TJ = 125°C 2.5 3.0 3.3 V V µA mA nA V V z z z z BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2003 IXYS All rights reserved DS98941B(11/03) IXGH 32N170 IXGT 32N170 www.DataSheet4U.com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 22 30 120 3500 VCE = 25 V, VGE = 0 V, f = 1 MHz 165 40 155 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 51 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.6 VCES, RG = Roff = 2.7 Ω 45 38 270 250 11 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.6 VCES, RG = Roff = 2.7 Ω 48 42 6.0 360 560 14 500 500 S A pF pF pF nC nC nC ns ns ns ns Dim. e ∅P TO-247 AD Outline gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % VGE = 10V, VCE = 10V 20 mJ ns ns mJ ns ns mJ 0.35 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 32N170 IXGT 32N170 www.DataSheet4U.com Fig. 1. Output Characte ristics @ 25 Deg. C 64 56 48 VGE = 17V 15V 13V 11V 9V 240 210 180 Fig. 2. Extended Output Characte ristics @ 25 de g. C VGE = 17V 15V 13V I C - Amperes I C - Amperes 40 32 24 16 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 150 120 90 60 30 0 11V 9V 7V 7V V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 64 56 48 VGE = 17V 15V 13V 11V 1.8 0 2 4 V C E - Volts 6 8 10 12 14 Fig. 4. De pende nce of V CE(sat) on Tem perature V GE = 15V 1.6 V C E (sat)- Normalized 9V I C = 64A 1.4 I C - Amperes 40 32 24 7V 16 8 0 0 1 2 3 4 5 6 1.2 1 I C = 32A 0.8 0.6 -50 -25 0 25 50 75 I C = 16A 100 125 150 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage 8 7 6 TJ = 25ºC 100 90 80 TJ - Degrees Centigrade Fig. 6. Input Adm ittance I C - Amperes 70 60 50 40 30 20 TJ = 125ºC 25ºC -40ºC VC E - Volts 5 4 3 2 1 6 7 8 9 10 11 12 13 14 15 16 17 I C = 64A 32A 16A 10 0 5 6 7 8 9 10 V G E - Volts V G E - Volts © 2003 IXYS All rights reserved IXGH 32N170 IXGT 32N170 www.DataSheet4U.com Fig. 7. Transconductance 45 40 35 TJ = -40ºC 25ºC 125ºC 25 23 21 19 17 15 13 11 .


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