NSBC114EDXV6T5

NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices www.DataSheet4U.com Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. Features (3) R1 Q1 Q2 R2 (4) R1 (5) NSBC114EDXV6T1 (6) http://onsemi.com (2) R2 (1) Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead−Free Solder Plating These are Pb−Free Devices 1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT−563 CASE 463A PLASTIC xx M G 1 xx = Device Code (Refer to Page 2) M = Date Code G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation; TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation; TA = 25°C D...