SUD50N04-06P

SUD50N04-06P www.DataSheet4U.com Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0065 at VGS = 10 V 0.008 at VGS = 4.5 V ID (A)a 20 20 Qg (Typ.) 53.6 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification TO-252 D G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD50N04-06P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS Limit 40 ± 16 20c 20c 15.9b 11b 60 20c 2.5b 30 45 79 39.5 3.3b 1.6b - 55 to 175 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Package limited. Document Number: 74443 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 37 1.5 Maximum 4.5 1.9 Unit °C/W SUD50N04-06P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise n...