SUD50N04-07L

SUD50N04-07L New Product Vishay Siliconix www.DataSheet4U.com N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A)c 65 54 rDS(on) (W) 0.0074 @ VGS = 10 V 0.011 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D Low Threshold APPLICATIONS D Motor Control D Automotive - 12-V Boardnet D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD50N04-07L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 65c 46c 100 40 80 65 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient J ti t A bi tb Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 18 40 1.9 Maximum 22 50 2.3 Unit _C/W Notes: a. Duty cycle v 1%. b. Surface mounted on 1” FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72344 S-32079—Rev. B, 13-Oct-03 www.vishay.com 1 SUD50N04-07L Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VG...