N-Channel MOSFET
SUD50N04-16P
www.DataSheet4U.com
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(...
Description
SUD50N04-16P
www.DataSheet4U.com
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) (Ω) 0.016 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, c 20 20 Qg (Typ.) 15.6 nC
FEATURES
TrenchFET® Power MOSFET 100 % Rg and UIS Tested
RoHS
COMPLIANT
APPLICATIONS
LCD TV Inverter Secondary Synchronous Rectification
TO-252
D
Drain Connected to Tab G D S
G
Top View S Ordering Information: SUD50N04-16P-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS Limit 40 ± 16 20c 20c 9.8b 6.8b 50 20c 2.5b 20 20 35.7 17.8 3.1b 1.5b - 55 to 175 Unit V
Continuous Drain Current (TJ = 150 °C)
ID
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
IDM IS IAS EAS
A
mJ
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Package limited. Document Number: 74477 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 40 3.4 Maximum 50 5.3 Unit °C/W
SUD50N04-16P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwis...
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