SUD50N04-16P

SUD50N04-16P www.DataSheet4U.com Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.016 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, c 20 20 Qg (Typ.) 15.6 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification TO-252 D Drain Connected to Tab G D S G Top View S Ordering Information: SUD50N04-16P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS Limit 40 ± 16 20c 20c 9.8b 6.8b 50 20c 2.5b 20 20 35.7 17.8 3.1b 1.5b - 55 to 175 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Package limited. Document Number: 74477 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 40 3.4 Maximum 50 5.3 Unit °C/W SUD50N04-16P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwis...