SUD50N04-8m8P

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0088 at VGS = 10 V 0.0105 at VGS = 4.5 V ID (A)a 50 50 Qg (Typ.) 16 nC TO-252 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS LCD Display Backlight Inverters DC/DC Converters D GDS Top View Drain Connected to Tab Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg G S N-Channel MOSFET Limit 40 ± 20 50a 44 14b 11.2b 100 40 2.6b 30 45 48.1 30.8 3.1b 2.0b - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Steady State Steady State Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 Symbol RthJA RthJC Typical 32 2.1 Maximum 40 2.6 Unit °C/W www.vishay.com 1 SUD5...