N-Channel MOSFET
SUD50N04-8m8P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0088 at VGS = 10...
Description
SUD50N04-8m8P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0088 at VGS = 10 V 0.0105 at VGS = 4.5 V
ID (A)a 50 50
Qg (Typ.) 16 nC
TO-252
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
LCD Display Backlight Inverters DC/DC Converters
D
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
G
S
N-Channel MOSFET
Limit 40 ± 20 50a 44 14b
11.2b 100 40 2.6b 30 45 48.1 30.8 3.1b 2.0b - 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board.
Steady State Steady State
Document Number: 68647 S10-0109-Rev. B, 18-Jan-10
Symbol RthJA RthJC
Typical 32 2.1
Maximum 40 2.6
Unit °C/W
www.vishay.com 1
SUD5...
Similar Datasheet