SI7900EDN

Si7900EDN New Product Vishay Siliconix www.DataSheet4U.com Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.026 @ VGS = 4.5 V 20 0.031 @ VGS = 2.5 V 0.039 @ VGS = 1.8 V ID (A) 9 8 7 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakt Package – Low-Thermal Resistance, RthJC – Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion Batteries D D PowerPAKt 1212-8 3.30 mm S1 1 2 3 G1 S2 3.30 mm 2.4 kW G2 4 2.4 kW G2 G1 D 8 7 6 5 D D D S1 N-Channel N-Channel S2 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 20 "12 9 Steady State Unit V 6 4.3 30 A 1.4 1.5 0.79 –55 to 150 W _C ID IDM IS PD TJ, Tstg 6.4 2.9 3.2 1.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71425 S-03369—Rev. A, 02-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 30 65 1.9 Maximum 38 82 2.4 Unit _C/W 1 Si7900EDN Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshol...