SI7902EDN

Si7902EDN Preliminary Information Vishay Siliconix www.DataSheet4U.com Dual N-Channel 30-V (D-S) MOSFET, Common Drain PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 8.3 8.0 6.7 rDS(on) (W) 0.028 @ VGS = 4.5 V 0.030 @ VGS = 3.7 V 0.043 @ VGS = 2.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion/LiP Batteries D D PowerPAKt 1212-8 3.30 mm S1 1 2 3 G1 S2 3.30 mm 1.8 kW G2 4 1.8 kW G2 G1 D 8 7 6 5 D D D S1 N-Channel N-Channel S2 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 30 "12 8.3 Steady State Unit V 5.6 4.0 40 A 1.3 1.5 0.79 –55 to 150 W _C ID IDM IS PD TJ, Tstg 6.0 2.7 3.2 1.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Symbol Typical 30 65 1.9 Maximum 38 82 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. This data sheet contains preliminary specifications that are subject to change. Document Number: 71801 S-05696—Rev. A, 18-Feb-02 www.vishay.com 1 Si7902EDN Vishay Siliconix Preliminary Inf...