SI7958DP

Si7958DP New Product Vishay Siliconix www.DataSheet4U.com Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) 0.0165 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 11.3 10.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings Package APPLICATIONS D Automotive* − 12-V Boardnet − Motor Drives − High-Side Switch *Contact factory for automotive qualification PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: Si7958DP-T1—E3 (Lead Free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 11.3 9.0 40 2.9 35 61 3.5 2.2 Steady State Unit V 7.2 5.8 A 1.2 mJ 1.4 0.9 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter M i J ti t A bi ta Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72661 S-32677—Rev. A, 29-Dec-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 2.2 Maximum 3...