SI7991DP

Si7991DP New Product Vishay Siliconix www.DataSheet4U.com Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −10.2 −8.1 rDS(on) (W) 0.023 @ VGS = −10 V 0.035 @ VGS = −4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Load Switch − Notebook PCs − Desktop PCs − Game Stations D Battery Switch PowerPAK SO-8 S1 6.15 mm S1 S2 1 2 G1 S2 5.15 mm 3 4 G1 G2 G2 D1 8 7 D1 D2 6 5 D2 Ordering Information: Si7991DP-T1 D1 P-Channel MOSFET D2 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −10.2 −8.2 −30 −2.9 3.5 2.2 −55 to 150 −6.6 −5.3 A −1.2 1.4 0.9 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72515 S-32127—Rev. B, 27-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 28 60 3 Maximum 35 85 3.7 Unit _C/W 1 Si7991DP Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE ...