SUD50N06-36

New Product SUD50N06-36 www.DataSheet4U.com Vishay Siliconix N-Channel 60-V (D-S), 150 °C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) 0.036 at VGS = 10 V 0.042 at VGS = 4.5 V ID (A)a 12 12 Qg (Typ) 10.5 nC FEATURES TrenchFET® Power MOSFET 100 % Rg & UIS Tested RoHS COMPLIANT APPLICATIONS LCD TV Inverter Push Pull Converter TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD50N06-36-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 60 ± 20 12a 12a 5.9b 4.7b 50 12a 2.0b 15 11.2 24 15.3 2.4b 1.5b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID IDM IS IAS EAS Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 70437 S-72510-Rev. A, 03-Dec-07 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 43 4.3 Maximum 52 5.2 Unit °C/W New Product SUD50N06-36 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Sour...