SI2327DS

Si2327DS New Product Vishay Siliconix www.DataSheet4U.com P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −200 FEATURES ID (A) −0.49 −0.48 rDS(on) (W) 2.35 @ VGS = −10 V 2.45 @ VGS = −6.0 V Qg (Typ) 80 8.0 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2327DS -T1—E3 Top View Si2327DS (D7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Single-Pluse Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 1.0 1 0 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 5 sec Steady State −200 $20 Unit V −0.49 −0.39 −1.0 −1.0 4.0 0.8 1.25 0.8 −55 to 150 −0.38 −0.31 −0.6 mJ 0.75 0.48 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 73240 S-42448—Rev. A, 10-Jan-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2327DS Vishay Siliconix New Product www.DataSheet4U.com SP...