SI7430DP

Si7430DP New Product www.DataSheet4U.com Vishay Siliconix N-Channel 150-V (D-S) WFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) 0.045 at VGS = 10 V 0.047 at VGS = 8 V ID (A)a 26 25 23 nC Qg (Typ) FEATURES Extremely Low Qgd WFET® Technology for Reduced dV/dt, Qgd and Shoot-Through 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS PowerPAK SO-8 Primary Side Switch Single-Ended Power Switch 5.15 mm D 6.15 mm S 1 2 3 S S G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 150 ± 20 26 21 7.2b, c 5.7b, c 50 32 4.5b, c 20 20 64 44 5.2b, c 3.3b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, f t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 19 1.5 Maximum 24 1.8 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 bo...