SI7434DP

Si7434DP New Product Vishay Siliconix www.DataSheet4U.com N-Channel 250-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 250 FEATURES ID (A) 3.8 3.7 rDS(on) (W) 0.155 @ VGS = 10 V 0.162 @ VGS = 6 V D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested APPLICATIONS D Primary Side Switch In: − Telecom Power Supplies − Distributed Power Architectures − Miniature Power Modules PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G N-Channel MOSFET Bottom View Ordering Information: Si7434DP-T1—E3 Creepage Clearance: 30 mils S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 250 "20 3.8 3.0 40 4.3 13 8.4 5.2 3.3 Steady State Unit V 2.3 1.8 A 1.6 mJ 1.9 1.2 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72579 S-32408—Rev. A, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W 1 Si7434DP Vishay Siliconix New Product www.DataS...