P-Channel MOSFET
Si7439DP
New Product
Vishay Siliconix
www.DataSheet4U.com
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−150
...
Description
Si7439DP
New Product
Vishay Siliconix
www.DataSheet4U.com
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−150
FEATURES
ID (A)
−5.2 −5.0
rDS(on) (W)
0.090 @ VGS = −10 V 0.095 @ VGS = −6 V
D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application D Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg and Avalanche Tested
APPLICATIONS
D Active Clamp in Intermediate DC/DC Power Supplies
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm
S
4 D 8 7 D 6 D 5 D
G
G
Bottom View Ordering Information: Si7439DP-T1—E3
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
Steady State
−150 "20
Unit
V
−5.2 −4.1 −50 −4.2 −40 80 5.4 3.4 −55 to 150
−3.0 −2.4 A −1.6
mJ 1.9 1.2 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes Document Number: 73106 S-41526—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7439DP
Vishay Siliconix
a. Surface Mo...
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