SI7439DP

Si7439DP New Product Vishay Siliconix www.DataSheet4U.com P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −150 FEATURES ID (A) −5.2 −5.0 rDS(on) (W) 0.090 @ VGS = −10 V 0.095 @ VGS = −6 V D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application D Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg and Avalanche Tested APPLICATIONS D Active Clamp in Intermediate DC/DC Power Supplies PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm S 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7439DP-T1—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs Steady State −150 "20 Unit V −5.2 −4.1 −50 −4.2 −40 80 5.4 3.4 −55 to 150 −3.0 −2.4 A −1.6 mJ 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes Document Number: 73106 S-41526—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7439DP Vishay Siliconix a. Surface Mo...