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HYB18L512160BF-7.5

Qimonda AG

DRAMs for Mobile Applications 512-Mbit Mobile-RAM

December 2006 www.DataSheet4U.com HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-...


Qimonda AG

HYB18L512160BF-7.5

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December 2006 www.DataSheet4U.com HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM RoHS compliant Data S heet Rev. 1.22 Data Sheet. www.DataSheet4U.com HY[B/E]18L512160BF-7.5 512-Mbit Mobile-RAM HYB18L512160BF-7.5, HYE18L512160BF-7.5 Revision History: 2006-12, Rev. 1.22 Page All 51 54 50 Subjects (major changes since last revision) Qimonda update IDD7 change from 20 to 25 Updated the package drawing. Table 20: Delete note 6 Change Note 6 from (tT -1) to [0.5 x (tT -1)] . - IDD4: change from 60 to 90 - IDD7: change from 40 to 20 - add a note: Value shown is typical - Updated the package drawing. - package name: change from P-TFBGA to PG-TFBGA - Remove all references to HYB18L512160BC-7.5 and HYE18L512160BC-7.5 Previous Version: 2005-11, Rev. 1.11 Previous Revision: Rev. 1.1 51 54 All Previous Version: Rev. 1.0 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] qag_techdoc_rev400 / 3.2 QAG / 2006-08-07 01132005-06IU-IGVM 2 Data Sheet. www.DataSheet4U.com HY[B/E]18L512160BF-7.5 512-Mbit Mobile-RAM 1 1.1 Overview Features 4 banks × 8 Mbit × 16 organization Fully synchronous to positive clock edge Four internal banks for concurrent operation Programmable CAS latency:...




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