IS41LV16256B

IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Lead-free available www.DataSheet4U.com ISSI APRIL 2005 ® DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems. These features make the IS41LV16256B ideally suited for high band-width graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS41LV16256B is packaged in 40-pin 400-mil SOJ and TSOP (Type II). -35 35 11 18 14 60 -60 60 15 30 25 110 Unit ns ns ns ns ns KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. EDO Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) PIN CONFIGURATIONS 40-Pin TSOP (Type II) VDD I/O0 I/O1 I/O2 I/O3 VDD I/O4 I/O5 I/O6 I/O7 1 2 3 4 5 6 7 8 9 10 40 39 38 37 36 35 34 33 32 31 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 40-Pin SOJ VDD I/O0 ...