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CSPEMI400
SIM Card EMI Filter Array with ESD Protection
Features
• • • • • • • Three channels of EMI filtering, each with ESD protection Two additional channels of ESD-only protection ±10kV ESD protection (IEC 61000-4-2, contact discharge) ±25kV ESD protection (HBM) Greater than 30dB of attenuation at 1GHz 10-bump, 1.960mm x 1.330mm footprint Chip Scale Package (CSP) Lead-free version available
Product Description
CAMD's CSPEMI400 is an EMI filter array with ESD protection, which integrates three pi filters (C-R-C) and two additional channels of ESD protection. The CSPEMI400 has component values of 20pF-47Ω20pF, and 20pF-100Ω-20pF. The parts include avalanche-type ESD diodes on every pin, which provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The ESD diodes connected to the filter ports safely dissipate ESD strikes of ±10kV, exceeding the maximum requirement of the IEC 61000-4-2 international standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the pins are protected for contact discharges at greater than ±25kV. The ESD diodes on pins A4 and C4 ports are designed and characterized to safely dissipate ESD strikes of ±10kV, well beyond the maximum requirement of the IEC 61000-4-2 international standard. This device is particularly well suited for portable electronics (e.g. mobile handsets, PDAs, notebook computers) because of its small package format and easyto-use pin assignments. In particular, the CSPEMI400 is ideal for EMI filtering and protecting data lines from ESD for the SIM card slot in mobile handsets. The CSPEMI400 is available in a space-saving, lowprofile Chip Scale Package with optional lead-free finishing.
Applications
• • • SIM Card slot in mobile handsets I/O port protection for mobile handsets, notebook computers, PDAs, etc. EMI filtering for data ports in cell phones, PDAs or notebook computers
Electrical Schematic
R1 A1 C C GND R1 A3 C C C3 A4 C C C4 C1 A2 C C R2 C2
B2,B4
© 2005 California Micro Devices Corp. All rights reserved. 09/28/05
R1=100Ω R2=47Ω
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
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Fax: 408.263.7846
●
www.cmd.com
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CSPEMI400
PACKAGE / PINOUT DIAGRAMS
TOP VIEW (Bumps Down View)
Orientation Marking (see note 2)
BOTTOM VIEW (Bumps Up View)
1 A B C
2
3
4
A4 A3 B2 C4 C3 C2 A2 B1 C1 A1
A1
Orientation Marking
AG
CSPEMI400 CSP Package
Notes: 1) These drawings are not to scale. 2) Lead-free devices are specified by using a "+" character for the top side orientation mark.
PIN DESCRIPTIONS
TYPE EMI Filter EMI Filter Device Ground EMI Filter ESD Channel ESD Channel PIN A1 C1 A2 C2 B1 B2 A3 C3 A4 C4 DESCRIPTION EMI Filter with ESD Protection for RST Signal EMI Filter with ESD Protection for RST Signal EMI Filter with ESD Protection for CLK Signal EMI Filter with ESD Protection for CLK Signal Device Ground Device Ground DAT EMI Filter with ESD Protection DAT EMI Filter with ESD Protection ESD Proection Channel - VCC Supply ESD Proection Channel
Ordering Information
PART NUMBERING INFORMATION
Standard Finish Bumps 10 Package CSP Ordering Part Number1 CSPEMI400 Part Marking AG Lead-free Finish2 Ordering Part Number1 CSPEMI400G Part Marking AG
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. Note 2: Lead-free devices are specified by using a "+" character for the top side orientation mark.
© 2005 California Micro Devices Corp. All rights reserved.
2
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.cmd.com
09/28/05
www.DataSheet4U.com
CSPEMI400
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER Storage Temperature Range DC Power per Resistor DC Package Power Rating RATING -65 to +150 100 300 UNITS °C mW mW
STANDARD OPERATING CONDITIONS
PARAMETER Operating Temperature Range RATING -40 to +85 UNITS °C
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL R1 R2 C VSTANDOFF ILEAK VSIG PARAMETER Resistance of R1 Resistance of R2 Capacitance Stand-off Voltage Diode Leakage Current Signal Voltage Positive Clamp Negative Clamp In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Cut-off frequency ZSOURCE = 50Ω, ZLOAD = 50Ω Cut-off frequency ZSOURCE = 50Ω, ZLOAD = 50Ω VIN = 2.5VDC, 1MHz, 30mV ac I = 10μA VBIAS = 3.3V ILOAD = 10mA ILOAD = -10mA Notes 2,4 and 5 ±25 ±10 Notes 2,3,4 and 5 +12 -7 R = 100Ω, C = 20pF R = 47Ω, C = 20pF 77 85 V V MHz MHz kV kV 5.6 -1.5 6.8 -0.8 CONDITIONS MIN 80 38 16 TYP 100 47 20 6.0 300 9.0 -0.4 MAX 120 56 24 UNITS Ω Ω pF V nA V V
VESD
VCL
fC1 fC2
Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the op.