IRF6678PbF

RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l l DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) IRF6678PbF IRF6678TRPbF www.DataSheet4U.com PD - 97223 VDSS Qg tot VGS Qgd 15nC RDS(on) Qgs2 4.0nC RDS(on) Qoss 28nC 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qrr 46nC Vgs(th) 1.8V 43nC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6678PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching...