IRF6611TRPbF

PD - 97216 IRF6611PbF IRF6611TRPbF www.DataSheet4U.com RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 12nC RDS(on) Qgs2 3.3nC RDS(on) Qoss 23nC 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qrr 16nC Vgs(th) 1.7V 37nC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MX DirectFET™ ISOMETRIC Description The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6611PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switchin...