IRF6631

PD - 97183 www.DataSheet4U.com IRF6631 RDS(on) Qoss 7.3nC DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l RoHS compliant containing no lead or bromide  Low Profile (<0.6 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET applications  Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qgs2 1.1nC 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10nC Vgs(th) 1.8V 12nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET™ ISOMETRIC Description The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce bot...