IRF6633

PD - 96989B IRF6633 l RoHs Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 4.0nC 1.2nC 32nC 8.8nC 1.8V MP DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduc...