DirectFET Power MOSFET
PD - 96989B
IRF6633
l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Comp...
Description
PD - 96989B
IRF6633
l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET
application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 4.0nC 1.2nC 32nC 8.8nC 1.8V
MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduc...
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