IRF6635

PD - 96981B www.DataSheet4U.com IRF6635 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHs compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 47nC 17nC 4.7nC 48nC 29nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for SyncFET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce bot...