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IRF6637 Dataheets PDF



Part Number IRF6637
Manufacturers International Rectifier
Logo International Rectifier
Description DirectFET Power MOSFET
Datasheet IRF6637 DatasheetIRF6637 Datasheet (PDF)

PD - 96968 www.DataSheet4U.com IRF6637 RDS(on) Qoss 9.9nC DirectFET™ Power MOSFET ‚ l l l l l l l l l Lead and Bromide Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VG.

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PD - 96968 www.DataSheet4U.com IRF6637 RDS(on) Qoss 9.9nC DirectFET™ Power MOSFET ‚ l l l l l l l l l Lead and Bromide Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC RDS(on) Qgs2 1.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qrr 20nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET™ ISOMETRIC Description The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 25 Typical R DS (on) (mΩ) Max. 30 ±20 14 11 59 110 31 11 VGS, Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current Continuous Drain Current, VGS @ 10V g e @ 10V e @ 10V f h 12 10 8 6 4 2 0 0 4 8 ID= 11A A Single Pulse Avalanche Energy Ãg mJ A ID = 14A 20 15 TJ = 125°C 10 TJ = 25°C 5 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 VDS = 24V VDS= 15V 12 16 20 24 Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. Fig 1. Typical On-Resistance Vs. Gate Voltage QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = .


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