Document
PD - 96968
www.DataSheet4U.com
IRF6637
RDS(on) Qoss
9.9nC
DirectFET Power MOSFET
l l l l l l l l l
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.0nC
RDS(on) Qgs2
1.0nC
30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V
Qrr
20nC
Vgs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
25
Typical R DS (on) (mΩ)
Max.
30 ±20 14 11 59 110 31 11
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current Continuous Drain Current, VGS @ 10V
g
e @ 10V e @ 10V f h
12 10 8 6 4 2 0 0 4 8 ID= 11A
A
Single Pulse Avalanche Energy
Ãg
mJ A
ID = 14A 20 15 TJ = 125°C 10 TJ = 25°C 5 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0
VDS = 24V VDS= 15V
12
16
20
24
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = .