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Part Number IXTR200N10P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR200N10P DatasheetIXTR200N10P Datasheet (PDF)

  IXTR200N10P   IXTR200N10P
Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXTR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g z z ISOPLUS 247TM E153432 TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150 G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z Avalanche voltage rated Fast recovery intrinsic d.



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