IXTR200N10P

Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXTR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g z z ISOPLUS 247TM E153432 TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150 G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z Avalanche voltage rated Fast recovery intrinsic diode Applications z DC-DC converters z z 50/60 Hz, RMS, 1 minute Mounting Force 2500 20..120/4.6..20 5 Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A TJ = 150°C TJ = 175°C Characteristic Values Min. Typ. Max. 100 3.0 5....