K1S3216B1C

Preliminary K1S3216B1C Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80uA to 100uA Draft Date January 16, 2003 June 9, 2003 Remark Advanced Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.1 June 2003 Preliminary K1S3216B1C 2M x 16 bit Uni-Transistor CMOS RAM FEATURES www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7V~2.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support Package Type: 48-FBGA-6.0x8.0 PRODUCT FAMILY Power Dissipation Product Family Operating Temp. Vcc Range Speed Standby (ISB1, Max.) 100µA Operating (ICC2, Max.) 30mA PKG Type K1S3216B1C-I Industrial(-40~85°C) 1.7V~2.1V 70/85ns 48-FBGA-6...