Document
K6F3216U6M Family
Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM www.DataSheet4U.com
Revision History
Revision No. History
0.0 0.1 Initial draft Revised - Changed ICC2 from 35mA to 40mA for 55ns product from 25mA to 35mA for 70ns product - Changed ISB1 from 30µA to 40 µA - Changed IDR from 15 µA to 20µ A Finalize
Draft Date
January 31, 2002 July 30, 2002
Remark
Preliminary Preliminary
1.0
December 18, 2002
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 December 2002
K6F3216U6M Family
FEATURES
• Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00
CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6F3216U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PRODUCT FAMILY
Power Dissipation Product Family K6F3216U6M-F Operating Temperature Industrial(-40~85°C) Vcc Range 2.7~3.3V Speed 551)/70ns Standby (ISB1, Max.) 40µA Operating (ICC1, Max) 7mA PKG Type 55-TBGA-7.50x12.00
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1 2 3 4 5 6 7 8
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A B C D E F G H J K L M
N.C
N.C
Vcc Vss Row Addresses
N.C
LB
OE
A0
A1
A2
CS2
Row select
Memory Cell Array
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
I/O1~I/O8
Data cont Data cont Data cont
I/O Circuit Column select
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O9~I/O16
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
A18
A8
A9
A10
A11
A20 CS1 CS2
N.C
N.C
N.C
N.C
OE WE UB LB
Control Logic
55-TBGA: Top View (Ball Down)
Name CS1, CS 2 OE WE A0~A20
Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs
Name Vcc Vss UB LB N.C
Function Power Ground Upper Byte(I/O 9~16) Lower Byte(I/O 1~8) No Connection
I/O 1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 1.0 December 2002
K6F3216U6M Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F3216U6M-EF55 K6F3216U6M-EF70 Function 55-TBGA, 55ns, 3.0V 55-TBGA, 70ns, 3.0V
CMOS SRAM www.DataSheet4U.com
FUNCTIONAL DESCRIPTION
CS1 H X1) X1) L L L L L L L L CS2 X1) L X1) H H H H H H H H OE X1.