DatasheetsPDF.com

K6F3216U6M Dataheets PDF



Part Number K6F3216U6M
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F3216U6M DatasheetK6F3216U6M Datasheet (PDF)

K6F3216U6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed ICC2 from 35mA to 40mA for 55ns product from 25mA to 35mA for 70ns product - Changed ISB1 from 30µA to 40 µA - Changed IDR from 15 µA to 20µ A Finalize Draft Date January 31, 2002 July 30, 2002 Remark Preliminary Preliminary 1.0 December 18, 2002 Final The attached datasheets are provid.

  K6F3216U6M   K6F3216U6M



Document
K6F3216U6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed ICC2 from 35mA to 40mA for 55ns product from 25mA to 35mA for 70ns product - Changed ISB1 from 30µA to 40 µA - Changed IDR from 15 µA to 20µ A Finalize Draft Date January 31, 2002 July 30, 2002 Remark Preliminary Preliminary 1.0 December 18, 2002 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 December 2002 K6F3216U6M Family FEATURES • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F3216U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F3216U6M-F Operating Temperature Industrial(-40~85°C) Vcc Range 2.7~3.3V Speed 551)/70ns Standby (ISB1, Max.) 40µA Operating (ICC1, Max) 7mA PKG Type 55-TBGA-7.50x12.00 1. The parameter is measured with 30pF test load. PIN DESCRIPTION 1 2 3 4 5 6 7 8 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A B C D E F G H J K L M N.C N.C Vcc Vss Row Addresses N.C LB OE A0 A1 A2 CS2 Row select Memory Cell Array I/O9 UB A3 A4 CS1 I/O1 I/O10 I/O11 A5 A6 I/O2 I/O3 Vss I/O12 A17 A7 I/O4 Vcc I/O1~I/O8 Data cont Data cont Data cont I/O Circuit Column select Vcc I/O13 N.C A16 I/O5 Vss I/O9~I/O16 I/O15 I/O14 A14 A15 I/O6 I/O7 I/O16 A19 A12 A13 WE I/O8 Column Addresses A18 A8 A9 A10 A11 A20 CS1 CS2 N.C N.C N.C N.C OE WE UB LB Control Logic 55-TBGA: Top View (Ball Down) Name CS1, CS 2 OE WE A0~A20 Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs Name Vcc Vss UB LB N.C Function Power Ground Upper Byte(I/O 9~16) Lower Byte(I/O 1~8) No Connection I/O 1~I/O16 Data Inputs/Outputs SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 1.0 December 2002 K6F3216U6M Family PRODUCT LIST Industrial Temperature Products(-40~85°C) Part Name K6F3216U6M-EF55 K6F3216U6M-EF70 Function 55-TBGA, 55ns, 3.0V 55-TBGA, 70ns, 3.0V CMOS SRAM www.DataSheet4U.com FUNCTIONAL DESCRIPTION CS1 H X1) X1) L L L L L L L L CS2 X1) L X1) H H H H H H H H OE X1.


K6F2016U4G K6F3216U6M K6F4016U4G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)