256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G Family
Document Title
Preliminary CMOS SRAM www.DataSheet4U.com
256Kx16 bit Super Low Power and Low Voltage...
Description
K6F4016U4G Family
Document Title
Preliminary CMOS SRAM www.DataSheet4U.com
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
October 15, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 0.0 October 2003
K6F4016U4G Family
FEATURES
Preliminary CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 3µA2) Operating (ICC1, Max) 4mA PKG Type
K6F4016U4G-F
Industrial(-40~85°C)
2.7~3.3V
551)/70ns
48-TBGA-6.00x7.00
1. The parameter is measured wit...
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