IRF6619PbF

IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l VDSS 20V max VGS RDS(on) RDS(on) ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V Qg tot Qgd 13nC Qgs2 3.5nC Qrr 18nC Qoss 22nC Vgs(th) 2.0V 38nC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MX DirectFET™ ISOMETRIC Description The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduc...