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SI3499DV Dataheets PDF



Part Number SI3499DV
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel 1.5-V (G-S) MOSFET
Datasheet SI3499DV DatasheetSI3499DV Datasheet (PDF)

Si3499DV New Product Vishay Siliconix www.DataSheet4U.com P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = −4.5 V −8 0.029 @ VGS = −2.5 V 0.036 @ VGS = −1.8 V 0.048 @ VGS = −1.5 V FEATURES ID (A) −7 −6.2 −5.2 −5.0 28 Qg (Typ) D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested APPLICATIONS D Load Switch for Portable Devices TSOP-6 Top View 1 3 mm 6 5 (3) G (4) S 2 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Informa.

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Si3499DV New Product Vishay Siliconix www.DataSheet4U.com P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = −4.5 V −8 0.029 @ VGS = −2.5 V 0.036 @ VGS = −1.8 V 0.048 @ VGS = −1.5 V FEATURES ID (A) −7 −6.2 −5.2 −5.0 28 Qg (Typ) D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested APPLICATIONS D Load Switch for Portable Devices TSOP-6 Top View 1 3 mm 6 5 (3) G (4) S 2 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3499DV-T1—E3 Marking Code: B3xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −8 "5 Unit V −7 −3.6 −20 −1.7 2.0 1.0 −55 to 150 −5.3 −3.9 A −0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73138 Pending—Rev. A, 18-Oct-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3499DV Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "5 V VDS = −8 V, VGS = 0 V VDS = −8 V, VGS = 0 V, TJ = 85_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −7 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) VGS = −2.5 V, ID = −6.2 A VGS = −1.8 V, ID = −5.2 A VGS = −1.5 V, ID = −3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −5 V, ID = −7 A IS = −1.7 A, VGS = 0 V −20 0.019 0.024 0.028 0.035 28 −0.63 −1.1 0.023 0.029 0.036 0.048 S V W −0.35 −0.75 "100 −1 −10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −4 V, RL = 4 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 4 VDS = −4 V, , VGS = −4.5 V, , ID = −7 A 28 2.9 5.8 8.5 27 65 210 110 40 13 40 100 315 165 70 ns W 42 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D − Drain Current (A) 20 1.5 V 15 10 5 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.4 VGS = 5 thru 2 V 30 25 I D − Drain Current (A) 20 15 10 TC = 125_C 5 25_C −55_C 0.8 1.2 1.6 2.0 Transfer Characteristics VGS − Gate-to-Source Voltage (V) Document Number: 73138 Pending—Rev. A, 18-Oct-04 2 Si3499DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 3500 3000 C − Capacitance (pF) 0.08 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 Crss Ciss Vishay Siliconix www.DataSheet4U.com Capacitance 0.06 VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 0.02 VGS = 4.5 V 0.00 0.04 Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 6 12 18 24 30 36 Qg − Total Gate Charge (nC) VDS = 4 V ID = 7 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7 A 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 10 I S − Source Current (A) 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 7 A TJ = 150_C 1 TJ = 25_C 0.04 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 73138 Pending—Rev. A, 18-Oct-04 www.vishay.com 3 Si3499DV Vishay Siliconix New Product www.DataSheet4U.com TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 −0.1 −0.2 −50 8 Power (W) 24 TA = 25_C 16 40 Single Pulse Power 32 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area *rDS(on.


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