IXFH30N50

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 A RDS(on) 0.16 W 0.15 W trr £ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C ±30 30N50 32N50 30N50 32N50 30N50 32N50 Maximum Ratings 500 500 ±20 V 30 32 120 128 30 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 V V V D (TAB) A A A A A A J mJ V/ns W °C °C °C °C Nm/lb.in. g TO-268 (D3) Case Style G S G = Gate, S = Source, (TAB) D = Drain, TAB = Drain Features 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W W International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Diode Applications VDSS VGS = 0 V, ID = 1 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = ...