Power MOSFET
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HiPerFETTM Power MOSFETs Q-Class
IXFH 32N50Q IXFT 32N50Q
VDSS
ID25
RDS(on)
500 V 32 A 0.16 Ω 5...
Description
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HiPerFETTM Power MOSFETs Q-Class
IXFH 32N50Q IXFT 32N50Q
VDSS
ID25
RDS(on)
500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C; pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ±20 ±30 32 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in. g g
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
300 1.13/10 6 4
Features
z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 1 0.16 V
z z z
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
z
V nA µA mA Ω
IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification
Advantages
z z z
Easy to mount Space savings High pow...
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