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MTDK3S6R Dataheets PDF



Part Number MTDK3S6R
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description ESD protected N-CHANNEL MOSFET
Datasheet MTDK3S6R DatasheetMTDK3S6R Datasheet (PDF)

CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 MTDK3S6R Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source.

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CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 MTDK3S6R Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. 200mW per element must not be exceeded *3. Human body model, 1.5kΩ in series with 100pF Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 100 400 *1 300 *2 350 *3 -55~+150 415 Unit V V mA mA mW V °C °C/W MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 Max. 1.0 ±1 500 3 6 50 25 5 1 Unit V V μA nA Ω mS Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 2/6 Test Conditions VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VGS=4.5V, ID=100mA VGS=1.8V, ID=20mA VDS=5V, ID=100mA GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD - pF VDS=10V, VGS=0, f=1MHz V VGS=0V, IS=10mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTDK3S6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking KG Characteristic Curves Typical Output Characteristics 0.7 0.6 Drain Current - ID(A) 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 2.0V 1.8V VGS=1.5V 5V 4.5V Typical Transfer Characteristics 0.8 0.7 Drain Current -ID(A) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 Gate-Source Voltage-VGS(V) 5 6 4.0V 3.5V 3V 2.5V VDS=3V MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Static Drain-Source On-State resistance vs Drain Current Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 3/6 Static Drain-Source On-State Resistance vs Gate-Source Voltage 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) Static Drain-Source On-State Resistance-RDS(ON)(Ω) 7 6 5 4 3 2 1 0 ID=20mA ID=100mA VGS=1.8V VGS=4.5V 1 0.001 0.01 0.1 Drain Current-ID(A) 1 0 2 4 6 8 Gate-Source Voltage-VGS(V) 10 Reverse Drain Current vs Source-Drain Voltage 1 Source-Drain Voltage-VSD(V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 Reverse Drain Current -IDR(A) Power Derating Curves 350 Power Dissipation---PD(mW) 300 Dual Capacitance vs Drain-to-Source Voltage 100 Ciss Capacitance---(pF) C oss 10 Crss 1 0.4 0.1 1 10 Drain-Source Voltage -VDS(V) 100 250 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Single MTDK3S6R CYS.


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