Document
CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 1/6
MTDK3S6R
Description
• Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package
BVDSS ID RDSON
20V 100mA 3Ω
Symbol
MTDK3S6R
Outline
SOT-363
Tr1
Tr 2
The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. 200mW per element must not be exceeded *3. Human body model, 1.5kΩ in series with 100pF
Symbol BVDSS
VGS ID IDM PD Tj Rth,ja
Limits 20 ±8 100 400 *1 300 *2 350 *3 -55~+150 415
Unit V V mA mA mW V °C °C/W
MTDK3S6R
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 Max. 1.0 ±1 500 3 6 50 25 5 1 Unit V V μA nA Ω mS
Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 2/6
Test Conditions VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VGS=4.5V, ID=100mA VGS=1.8V, ID=20mA VDS=5V, ID=100mA
GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD -
pF
VDS=10V, VGS=0, f=1MHz
V
VGS=0V, IS=10mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTDK3S6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking KG
Characteristic Curves
Typical Output Characteristics
0.7 0.6 Drain Current - ID(A) 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 2.0V 1.8V VGS=1.5V 5V 4.5V
Typical Transfer Characteristics
0.8 0.7 Drain Current -ID(A) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 Gate-Source Voltage-VGS(V) 5 6
4.0V 3.5V 3V 2.5V VDS=3V
MTDK3S6R
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Static Drain-Source On-State resistance vs Drain Current
Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 3/6
Static Drain-Source On-State Resistance vs Gate-Source Voltage
10 Static Drain-Source On-State Resistance-RDS(on)(Ω)
Static Drain-Source On-State Resistance-RDS(ON)(Ω)
7 6 5 4 3 2 1 0
ID=20mA ID=100mA
VGS=1.8V
VGS=4.5V
1 0.001
0.01 0.1 Drain Current-ID(A)
1
0
2
4 6 8 Gate-Source Voltage-VGS(V)
10
Reverse Drain Current vs Source-Drain Voltage 1 Source-Drain Voltage-VSD(V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 Reverse Drain Current -IDR(A)
Power Derating Curves 350 Power Dissipation---PD(mW) 300
Dual
Capacitance vs Drain-to-Source Voltage
100
Ciss
Capacitance---(pF)
C oss
10
Crss
1 0.4 0.1 1 10 Drain-Source Voltage -VDS(V) 100
250 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200
Single
MTDK3S6R
CYS.