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TGA2924-SG

TriQuint Semiconductor

10 Watt MMDS Packaged Amplifier

Advance Product Information www.DataSheet4U.com Aug 16, 2005 10 Watt MMDS Packaged Amplifier Key Features • • • • • • •...


TriQuint Semiconductor

TGA2924-SG

File Download Download TGA2924-SG Datasheet


Description
Advance Product Information www.DataSheet4U.com Aug 16, 2005 10 Watt MMDS Packaged Amplifier Key Features TGA2924-SG 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched IMD3 -45 dBc @ 28 dBm SCL, Typical Bias Conditions: 8 V @ 1.2 A (Quiescent) 0.5 µm HFET Technology 2 lead Cu-alloy base package Primary Applications MMDS Pt-Pt and Pt-Multi Pt Radio S-Band Power Amplifiers Product Description The TGA2924-SG HPA provides 12 dB of gain, 10 W of output power at 2.6 GHz and 2.5% EVM at 30 dBm output power. The device is ideally suited for high linearity, high power wireless data applications such as MMDS Point-to-Point or Point-toMulti-Point radios. The package has a high thermal conductivity copper alloy base. Internal partial matching simplifies system board layout by requiring a minimum of external components. Lead-Free & RoHS compliant. Fixtured Measured Performance Bias Conditions: Vd = 8 V, Idq =1.2 A Performance data taken in a 2.6 GHz application circuit 15 10 S-Parameter (dB) 5 0 -5 -10 -15 -20 -25 2 40.5 40 39.5 39 38.5 38 37.5 37 36.5 36 35.5 2.4 2.45 2.5 S21 S11 S22 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency (GHz) Evaluation Boards are available. Output Power (dBm) P2dB P1dB 2.55 2.6 2.65 2.7 2.75 2.8 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Spec...




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