PMWD15UN
Rev. 04 — 5 April 2005
www.DataSheet4U.com
Dual N-channel µTrenchMOS™ ultra low level FET
Product data sheet
...
PMWD15UN
Rev. 04 — 5 April 2005
www.DataSheet4U.com
Dual N-channel µTrenchMOS™ ultra low level FET
Product data sheet
1. Product profile
1.1 General description
Dual common drain N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounting package s Very low threshold voltage s Low profile s Fast switching
1.3 Applications
s Portable appliances s Battery management s PCMCIA cards s Load switching
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 4.2 W s ID ≤ 11.6 A s RDSon ≤ 18.5 mΩ
2. Pinning information
Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2)
G1 S1 G2 S2
mbl600
Simplified outline
8 5
Symbol
D D
1
4
SOT530-1 (TSSOP8)
Philips Semiconductors
PMWD15UN
Dual N-channel µTrenchMOS™ ultra low level FET
w w w . D a t a S h e e t 4 U . c
3. Ordering information
Table 2: Ordering information Package Name PMWD15UN TSSOP8 Description plastic thin shrink small outline package; 8 leads; body width 4.4 mm Version SOT530-1 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM
[1]
Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1
[1] [1] [1] [1]
Min −55 −55
[...