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74AUP1G386

NXP Semiconductors

Low-power 3-input EXCLUSIVE-OR gate

74AUP1G386 Low-power 3-input EXCLUSIVE-OR gate Rev. 02 — 10 January 2008 www.DataSheet4U.com Product data sheet 1. Ge...



74AUP1G386

NXP Semiconductors


Octopart Stock #: O-672648

Findchips Stock #: 672648-F

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Description
74AUP1G386 Low-power 3-input EXCLUSIVE-OR gate Rev. 02 — 10 January 2008 www.DataSheet4U.com Product data sheet 1. General description The 74AUP1G386 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G386 provides a single 3-input EXCLUSIVE-OR gate. 2. Features s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114E Class 3A exceeds 5000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Low noise overshoot and undershoot < 10 % of VCC s IOFF circuitry provides partial Power-down mode operation s Multiple package options s Specified from −40 °C...




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