LX5511

www.DataSheet4U.com TM ® LX5511 InGaP HBT 2.3 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.3-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current 90mA Power Gain 26 dB Total Current 150mA for Pout=18 dBm OFDM ƒ EVM<3 %, 2.4% Typical 54Mbps/64QAM ƒ Small Footprint: 3x3mm2 ƒ Height 0.9mm ƒ ƒ ƒ ƒ ƒ ƒ APPLICATIONS WWW . Microsemi . C OM The Microsemi LX5511 is a power amplifier that is optimized for WLAN applications in the 2.3GHz – 2.5GHz frequency range. The LX5511 Power Amplifier is implemented as a twostage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single low voltage supply of 3.3V 26dB power gain between 2.3-2.5GHz, at a low quiescent current of 90mA. For 20dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of less than 3.0%, and consumes 170mA total DC current.. The LX5511 is available in a 16-pin 3mmx3mm micro-lead quad package (MLPQ). The compact footprint, low profile, and thermal capability of the MLPQ package makes the LX5511 an ideal solution for medium-gain power amplifier requirements for IEEE 802.11b/g applications ƒ IEEE 802.11b/g IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ` Plastic MLPQ 16-Pin RoHS Compliant...