LX5518

www.DataSheet4U.com TM ® LX5518 InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 dB 26dBm @3%EVM,802.11g/5V 24dBm @3.5%EVM,80211g/3.3V 28dBm @CCK,802.11b/5V 27dBm @CCK,802.11b/3.3V 24.5% Efficiency @28dBm/5V Complete On-Chip Input Match Simple Output Match for Optimal EVM ƒ Temperature-Compensated OnChip Output Power Detector with Wide Dynamic Range ƒ Small Footprint: 3x3mm2 ƒ Low Profile: 0.9mm ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ APPLICATIONS The LX5518 is a high gain and high power amplifier optimized for 802.11b/g/n applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching, and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3-5V, and provides a power gain of 30dB and an output power of +26dBm at 5V for 3% EVM in the 2.4-2.5GHz. LX5518 also features an on-chip power detector at the output port of the PA to help reduce BOM cost and PCB space for implementation of power control in a typical wireless system. The LX5518 is available in a 16pin 3mm x 3mm quad flat no lead package (QFN 3×3-16L). The compact footprint, low profile, and excellent thermal capability make the LX5518 an ideal solution for 802.11b/g/n applic...