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IXTY1N80
High Voltage MOSFET
Description
www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C ...
IXYS
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