IXTP1N80

www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 Ω TC = 25°C 5 100 3 40 -55 ... +150 150 -55 ... +150 G S D (TAB) TO-252 AA (IXTY) G S D (TAB) Mounting torque TO-220 TO-252 TO-263 1.13/10 Nm/lb.in. 4 0.8 3 300 g g g °C G = Gate, S = Source, D = Drain, TAB = Drain Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5 25 500 11 V V nA µA µA Ω ! Rugged polysilicon gate ! Fast switching times Applications cell structure VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V ! Switch-mode ! ! DC choppers ! High frequency Advantages and resonant-mode power supplies Flyback inverters matching VGS = ...