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IXTP1R6N50P

IXYS

Power MOSFET

PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avala...


IXYS

IXTP1R6N50P

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Description
PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD S FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.6 2.5 1.6 75 10 43 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-220 0.35 g 3.00 g B Symbol Test Conditions O (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. (IXTY) G S TO-220AB (IXTP) D (Tab) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives BVDSS VGS = 0V, ID = 250A 500 V   Discharge Circiuts in Lasers, Spark VGS(th) VDS = VGS, ID = 25A 3.0 5.5 V Igniters, RF Generators High Voltage Pulse Power IGSS ...




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