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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q
VDSS ID25
RDS(on) trr
= 200 V = 80 A = 28 mW £ 200 ns
Maximum Ratings 200 200 ±20 ±30 80 320 80 45 1.5 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S TO-264 AA (IXFK)
(TAB)
G D S
D (TAB) TAB = Drain
TO-247 TO-264 TO-247 TO-264 TO-268
1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 10 4 g g g
G = Gate S = Source
Features • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 25 1 V V nA mA mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
28 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
98605A (6/99)
© 2000 IXYS All rights reserved
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IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q www.DataSheet4U.com
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 35 45 4600 VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 500 26 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2.0 W (External), 50 75 20 180 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 39 100 0.35 TO-247 TO-264 0.25 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 • ID25, pulse test
N
1.5 2.49
TO-264 AA (IXFK) Outline
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 320 1.5 200 A A V ns mC A
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V 1.2 10
TO-268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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